An efficient, self-consistent method of Monte Carlo and Poisson equation is used to simulate the electrical characteristic of deep submicron metal-oxide-semiconductor field effect Transistor ( MOSFET). 用蒙特卡罗-泊松方程自洽求解的方法,对深亚微米金属-氧化物-半导体场效应晶体管&MOSFET的电特性进行了模拟。
Metal-nitride-oxide-semiconductor field effect transistor 金属-氮化物-氧化物-半导体场效应晶体管
Microwave field effect transistor amplifier 微波场效应晶体管放大器
V-groove MOS field effect transistor V形槽MOS场效晶体管
Power V-type field effect transistor 大功率v型场效应晶体管
Schottky barrier gate field effect transistor 肖脱基势结型场效应晶体管
This invention discloses a trenched metal oxide semiconductor field effect transistor ( MOSFET) cell. 场效应晶体管以及制造场效应晶体管的方法。
The trouble of disable opening X-ray tube in ARL9400 X-ray fluorescence spectrograph caused by destroied field effect transistor was discussed. 介绍由于X射线荧光检测器探头的前置放大电路场效应管损坏而导致X射线光管不能打开的故障原因及故障排除方法。
Through the experiment with the circuits thermal drift, of TYZ-3 intelligent soil nutrition gauge, J-type field effect transistor ( JFET) was found as the major cause of circuits thermal drift. 本文简要综述了国内外的电路温度补偿方法,对TYZ-3智能型土壤养分测试仪的温度漂移进行了试验研究。
The Research and Design of Low Noise Pre-amplifier Based on Field Effect Transistor 基于场效应管的低噪声前置放大器的研究和设计
To achieve the high impedance required specially designed "electrometer" vacuum tubes, field effect transistor must be used in the input stage. 为适应高阻抗需要,仪器输入电路中须用特殊设计的静电计专用电子管、场效应晶体管。
Study on Characteristics of Ferroelectric Field Effect Transistor with Pt/ PZT/ Pt Structure Pt/PZT/Pt结构铁电场效应晶体管性能研究
Ion selective field effect transistor 离子选择场效应晶体管
A novel Recessed Source structure Field Effect Transistor ( RSFET) is presented. 提出了一种新型的凹源结构场效应晶体管(简称RSFET)。
Study of Static Characteristics and Leakage Current in High Field Region of Heterostructure Isolated Gate Field Effect Transistor 异质结绝缘栅场效应晶体管(HIGFETs)高场区静态特性模型和栅泄漏电流研究
The instrument used ion-sensitive field effect transistor as its sensor for ionic concentration measurement. 该仪器用离子敏场效应晶体管(ISFET)作为传感器来测量离子浓度。
The structure of nanoscale metal oxide semiconductor field effect transistor ( NANO MOSFET) is introduced. 本文首先给出了SOI上纳米金属氧化物半导体场效应晶体管(NANOMOSFET)的结构,它是一种非传统MOSFET。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor ( MISFET). 它的结构与普通金属绝缘体半导体场效应晶体管(MISFET)基本相同。
A new MOS field effect transistor sensitive to ammonia has been reported. 本文介绍一种新型氨气敏MOS场效应晶体管。
A simple kind of field effect transistor self electrooptic effect device ( FET SEED) smart pixels has been fabricated by interconnecting SEEDs and GaAs FETs on a printed circuit board. 在一块印刷电路板上通过将自电光效应器件(SEED)与GaAs埸效应晶体管(FET)进行互连制作了一种简单的场效应晶体管-自电光效应器件(FET-SEED)灵巧像素。
The methods for practical application of Ion Sensitive Field Effect Transistor ( ISFET) is described in this paper. 本文报告离子敏感场效应管(ISFET)的使用。
The design, fabrication and measurement of modulation doped ( Al, Ga) As/ GaAs field effect transistor MODFET's are carried out. 对(Al,Ga)As/GaAs调制掺杂场效应晶体管MODFET进行了设计、研制与测试。
Comparison of Vacuum and Semiconductor Field Effect Transistor Performance Limits 真空和半导体场效应晶体管性能极限的比较
Detailed modeling procedures were shown in modeling a 6 GHz field effect transistor ( FET) amplifier circuit. 通过对一个工作频率为6GHz的场效应管(FET)放大电路的建模过程的描述验证了该方法的可行性。
These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc. 这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
On account of pure graphene has a zero band gap, which severely limits its application in the field effect transistor, this paper is aimed at exploring the methods and processes of opening band gap by the density functional theory calculations. 由于纯石墨烯是零能隙的,这严重限制了它在场效应晶体管方面的应用。本论文工作目的在于通过密度泛函理论计算,对打开石墨烯能隙的方法和过程进行了探索研究。
SWNTs can be electrical conductor or semiconductor and have potential applications in nanoelectronics such as field effect transistor etc.. SWNTs可以是导体也可以是半导体,在纳米器件方面有着广泛的应用,如场效应晶体管等。
The output and transfer characteristics of the ferroelectric field effect transistor ( FeFET) were studied. 研究并比较了铁电场效应晶体管(FeFET)结构的输出特性和转移特性。
Using a pulse signal as a control variable and high-speed switching characteristic of field effect transistor, the modulating circuit implements pulsed laser diode driver. 调制电路以脉冲信号作为控制量,利用场效应管的高速开关特性,实现了对半导体激光器的脉冲驱动。
Suspended channel field effect transistor ( FET) is fabricated and the processes are improved to enhance stability of devices and provide ways making silicon nanowires. 制作了被称为悬浮沟道场效应管的NEMS器件,并在工艺上做了改进以提高器件的稳定性和提供制作硅纳米线的方法。